In situ study of growth kinetics of {100} and {110} crystal/melt interfaces during unidirectional solidification of silicon

The {100} and {110} solid/liquid interfaces of silicon are considered atomically rough, following the atom-byatom growth mode during crystallization processes. However, observed differences in growth kinetics are not yet well understood. In this study, the growth behavior of {1 0 0} and {1 1 0} crystal/melt interfaces in silicon is studied. The growth velocity at different cooling rates is investigated for both growth orientations. Experimental results show that these growth velocities are similar, irrespective of the cooling rate. An analysis of the ratio of the kinetic coefficients of both orientations shows that they are comparable.