A Novel Inverse-L Buried GaN Current-Aperture Vertical Electron Transistors

In order to overcome the problem of current collapse in transverse GaN devices and produce higher breakdown voltage power devices, research on vertical GaN-based power devices is crucial. This paper suggests an AlGaN/GaN current-aperture vertical electronic transistor (CAVET) with an inverted L-shaped buried layer structure. Through simulation and in-depth study of the proposed device, by changing the buried length and droping concentration and the buffer droping concentration, the results show that the inverted L-shaped buried CAVET enhances breakdown voltage to 2536 V. And the device achieving the figure of merit of $\mathbf{3}.\mathbf{3}\ \mathbf{GW}/\mathbf{cm}^{\mathbf{2}}$ , which are 148% higher than traditional structure device, but the on-resistance is only $\mathbf{1}.\mathbf{95}\ \mathbf{m}\mathbf{\Omega}\cdot \mathbf{cm}^{\mathbf{2}}$ .