Assessment of Channel Temperature in Β-(Alxga1-x)2o3/ga2o3 Heterostructure Field-Effect Transistors Using Visible Wavelength Thermoreflectance Thermal Imaging

This work demonstrates direct, rapid 2D thermal mapping measurement capabilities of the ultrawide bandgap semiconductor channel of lateral beta-(AlxGa1-x)(2)O-3/Ga2O3 transistors without sample contamination, long acquisition times, or sophisticated thermometry such as developing deep-ultra-violet compatible thermoreflectance systems. The temperature rise in the channel of a beta-(Al0.21Ga0.79)(2)O-3/Ga2O3 heterostructure field-effect transistor (HFET) was mapped using thermoreflectance imaging at 470 nm. First, the thermoreflectance response of the HFET channel was measured using a monochromator, revealing a maximum of the reflectance change around 470-480 nm. Thermoreflectance calibrations were then performed at 470 nm (peak of the reflectance change) and yielded an average thermoreflectance coefficient of 1.06 +/- 0.07 x 10(-4) K-1. Subsequent measurements of the device (power densities of 0.15-1.47 W/mm and gate-source voltage of 0 V) enabled extraction of a device-level thermal resistance of 51.1 mm center dot K/W in the channel at the drain-side of the gate. High-resolution, in situ scanning thermal microscopy measurements of the channel temperature rise show good agreement with and further support the thermoreflectance measurements. Finally, the thermal profile across the entire device length (metal electrodes and semiconductor channel) and width was simultaneously measured using thermoreflectance imaging at 470 nm, and the peak temperature rise was measured in the channel at the drain-side of the gate electrode.