Preparation and Mechanism of Black LiTaO3 Wafer with Controlled Transmission Efficiency of Light and Resistivity by Reduction Method

Tantalum lithium (LiTaO 3 ) is known as a " universal " material in the field of functional materials. However, due to its high pyroelectric coefficient and transmission efficiency, practical applications are limited. In this study, black LiTaO 3 wafer was prepared by a simple reduction process by using a new reductant composed of FeSiAl flaks, C nanoparticles, and Fe -C core - shell nanoparticles. It was found that the as -prepared wafers have tunable light transmission efficiency and resistance. Moreover, it was also found that the annealing temperature of 800 degrees C is the threshold temperature of the wafer in the reduction process. Furthermore, it was revealed that the underlying blacking mechanism could be attributed to the wafers ' generation of TaC and O vacancies during the reduction process. This work presents a simple method to blackening, uncovers a novel mechanism, and provides tunable light and resistivity transmission efficiency of LiTaO 3 , which may serve as benchmarks for related studies and promote LiTaO 3 ' s practical applicability.