Enhanced Mobility of Ternary InGaAs Quantum Wells Through Digital Alloying

High In content InGaAs quantum wells (In ≥ 75for topological quantum computing and spintronics applications. In highmobility InGaAs quantum wells, alloy disorder scattering is a limiting factor.In this report, we demonstrate that by growing the InGaAs quantum wells as adigital alloy, or a short period superlattice, we can reduce the alloy disorderscattering within the quantum well and increase the peak 2 K electron mobilityto 545,000 cm^2/V s, which is the highest reported mobility for high In contentInGaAs quantum wells to the best of the authors' knowledge. Our resultsdemonstrate that the digital alloy approach can be used to increase themobility of quantum wells in random alloy ternary materials.