Study on Raman scattering spectroscopy of Mn-doped GaN grown by the ammonothermal method

Mn-doped GaN crystals of a-plane and (11-22) plane were grown by the ammonothermal method. The Mn concentrations were characterized on the order of 1020 cm-3 by glow discharge mass spectrometry, and the valence state of Mn in GaN crystals was measured to be a mixed valence state of Mn2+ and Mn3+ using X-ray photoelectron spectroscopy. Raman scattering spectroscopy shows that due to the doping of Mn, the interaction potential energy between Ga and N ions changes, and the longitudinal optical mode E1(LO) shifts towards a lower frequency. The Raman scattering spectra of Mn-Mgk cation complexes formed by unintentional doping of Mg on the (11-22) plane were studied. Mn-doped GaN crystals of a-plane and (11-22) plane were grown by the ammonothermal method.