Bending Direction-Related Anisotropic Transport Characteristics of Two-Dimensional Janus MoSSe Devices

Sensing external pressure and generating a corresponding signal are important functions of a sensor device. The creation of bidirectional pressure sensors has vital applications in automation control, human-computer interface, and other domains. However, at present, bidirectional pressure sensors have not been widely developed and applied, and sensing the direction of pressure is also important for sensors. Because it breaks the out-of-plane symmetry, the Janus material is a promising material that can be used as a sensitive element for bidirectional pressure sensors. In this work, we theoretically proposed a bending two-dimensional Janus MoSSe material-based device model. It was found that p- and n-type doped devices generate ohmic and Schottky contacts, respectively. Accordingly, the conductance of p-type doped devices is greater than that of n-type doped devices at the same doping concentration. The variation of conductance is anisotropic for different bending directions: with an increasing bending angle, the conductance bent toward the S atom side increases, while the conductance bent toward the Se side gradually decreases. This property of the MoSSe device matches the requirement of the sensitive element of the bidirectional pressure sensors.