Enhancing dielectric properties of bentonite with Ce and Zn: structural insights and industrial applications

This study uses an incipient wet impregnation method to look into the structural and dielectric properties of Bentonite that have been changed by adding different amounts of Ce and Zn. X-ray diffraction (XRD) analysis showed that the montmorillonite phase was the most common in Ce- and Zn-doped bentonite. Silicon dioxide (SiO2) and quartz (Q) were also found. Scanning electron microscopy (SEM) demonstrated enhanced platelet aggregation and porous structures in doped compounds. Energy-dispersive X-ray spectroscopy (EDX) confirmed the presence of Si, Al, Na, Ce, Zn, Ca, Mg, Cl, Fe, and K elements. Dielectric analysis, focusing on frequency and temperature dependence, unveiled an inverse relationship between frequency and the dielectric constant. Additionally, a strong correlation between temperature and dielectric properties was established through regression equations, indicating an increase in dielectric constant with temperature. Electric modulus analysis showed dispersion at high frequencies, suggesting charge carrier mobility. The AC conductivity analysis showed that the conductivity consistently decreased as the temperature rose. There were clear frequency-independent plateaus and intrinsic charge carrier relaxation that were seen. A fitting analysis showed that charge carriers hopped and the dielectric relaxed, and adding Ce and Zn made the material less conductive. The novelty of this paper lies in its focus on examining the dielectric characteristics of doped materials based on bentonite, particularly concerning the incorporation of Zn and Ce.