Characterizing the Radiation Degradation of Metal Can Packaged Bipolar Transistor^*

In this study, the radiation damage of the metal can-packaged discrete bipolar transistors is investigated with ⁶⁰ Co ionizing radiation source under the high total dose environment. The experimental results of up to 1Mrad(Si) dose irradiation with dose rate of 100rad(Si)/s show that the degradation of all tested electrical parameters of the PNP transistors did not exceed the rated range of the device with the increase of the dose, and it has good radiation resistance under high total ionizing dose irradiation. Both saturation voltage drop and breakdown voltage increase to varying degrees, while reverse leakage is insensitive to ionizing radiation, current gain is the most sensitive parameter due to the modified electric field distribution in the device by the creation of radiation-induced traps. The results provide valuable reference information for assessing the radiation damage potential of bipolar devices intended for space applications. By studying the radiation-induced effects on electrical parameters, this research contributes to the understanding of how bipolar transistors perform under high total ionizing dose irradiation conditions, aiding in the development of radiation-tolerant electronic systems for space exploration.