Comparison of Electro-Optical Characteristics of Simulated and Fabricated InGaN/ GaN MQWs Green Light Emitting Diodes on c-Plane Sapphire

We present the simulation and fabrication with characterization of InGaN MQWs based green LEDs on c-plane sapphire substrate in this paper. The simulated results show that internal quantum efficiency droop has improved from 13% in reference structure to 4% in the modified structure at 200 A/cm ² current density with replacement of the 15 nm AlGaN step index EBL with a super-lattice pair of graded AlGaN EBL following a reduction in droop, polarization charges and increment in hole injection towards active region.