Optical Microcavity-Induced Moir Exciton Localization in Twisted WSe₂ Homobilayer

2D moir & eacute; superlattices offer a versatile platform for manipulating quantum materials, exploiting their spatially varying atomic registry to modify electronic structures, resulting in the emergence of flat electronic minibands, enhanced electronic interactions, and the onset of novel quantum phenomena. Despite extensive investigations into moir & eacute; excitons within twisted bilayer moir & eacute; superlattices, the interplay between moir & eacute; superlattices and optical microcavities remains elusive. Here, a WSe2 homobilayer with a small twist angle positioned on optical microcavities atop a SiO2 (285 nm)/Si substrate is investigated. Utilizing low-temperature photoluminescence (PL) spectroscopy, it is observed that the twisted homobilayer at the edge of the optical cavity (Edge-THB) exhibits enhanced localization of moir & eacute; excitons and a deeper moir & eacute; potential. This behavior is attributed to the combined influence of strain induced by the optical microcavity structure on the moir & eacute; superlattice and the amplification of the electromagnetic field. Furthermore, the existence of moir & eacute; excitons through a comprehensive analysis, encompassing temperature-dependent PL spectra, circularly polarized PL spectra, and Land & eacute; g-factor measurements for Edge-THB is validated. These findings provide valuable insights into the intricate interaction between moir & eacute; superlattices and optical microcavities, paving the way for future applications in quantum technologies.