Investigation of photovoltaic characteristics performance of p-InGaN/n-InGaN single junction solar cells using SCAPS 1D

In this work, we have investigated theoretically p-InxGa (1−x) N/n-InxGa(1−x)N single junction solar cells with an indium fraction of x = 0.65, taking into account photovoltaic characteristics such as the external quantum efficency (QE), fill factor (FF), conversion efficiency (η), open circuit voltage (Voc), and short circuit current density (J SC ), with varying upper p-InxGaN junction thickness but a fixed lower n-InxGaN junction thickness under sun AM1.5 illumination. We have used the Solar Cell Capacitance Simulator (SCAPS 1D) for the simulation. Our results, indicate that a p-In0.65Ga0.35N/ n-In0.65Ga0.35N Solar cells with optimal devices parameteres may achieve a J SC of around 30.20 mA/cm ² , Voc ~0.8307volt, FF ~85.83%, η ~21.54% and EQE ~98%. for a p-In0.65Ga0.35N layer thickness of 30 nm, p-doping of 4.5.10 ¹⁸ cm ⁻³ and n-In0.65Ga0.35N layer thickness of 5000 nm, n-doping of 8.10 ¹⁶ cm ⁻³ .