New Insights into the Random Telegraph Noise (RTN) in FinFETs at Cryogenic Temperature

In this paper, we characterize the Random Telegraph Noise (RTN) in FinFETs at cryogenic temperature. Owning to the steep subthreshold swing at cryogenic temperature, RTN caused by traps near Metal/HfO 2 interface interacting with gate can be observed, which is often overwhelmed by background noise at room temperature due to subtle $\mathbf{V}_{\mathbf{th}}$ shift. Combining with TCAD analysis, the trap location around the fin can be determined. Furthermore, full quantum vibrational wave functions integral calculations and surface potential based compact modeling considering band tail states and interface trap states are conducted to obtain accurate trap parameters. The results reveal a remarkable variety of traps at cryogenic temperatures.