Hot Carrier Degradation-Induced Variability in Different Lightly Doped Drain Processes: from Transistors to SRAM Cells
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
Key words
MOSFET circuits,Stress,MOSFET,Transistors,SRAM cells,Degradation,Fluctuations,Hot carrier degradation (HCD),lightly doped drain (LDD),MOSFETs,quasi-ballistic transport,static random access memory (SRAM),variability
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