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Demonstration of Bipolar Resistive Memory Fabricated Using an Ultra-Thin BaTiOx Resistive Switching Layer with a Thickness of ∼5 Nm

Chih-Chieh Hsu, Wen-Chin Wu, Zheng-Kai Xiao,Wun-Ciang Jhang, Zi-Rong Qiu,Sungjun Kim

PHYSICA B-CONDENSED MATTER(2025)

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Key words
Barium titanate,Resistive switching,Bipolar,Perovskite,Sputtering,Stoichiometry
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