Minimal Switching Loss Three-Stage Active Gate Driving Strategy Based on Dynamic Dv/dt Switching Model for GaN HEMT
IEEE TRANSACTIONS ON POWER ELECTRONICS（2025）
Key words
Switches,Switching loss,Capacitance,HEMTs,Voltage,Logic gates,Analytical models,Gallium nitride,Delays,Resistors,Gallium nitride high mobility transistor (GaN HEMT),active gate driver,dv/dt nonlinearity,three-stage driving strategy,minimal switching loss
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