A Study on Short Circuit Characteristics of 4H-Sic MOSFET Coupled with Electron Irradiation
IEEE TRANSACTIONS ON ELECTRON DEVICES（2025）
Key words
Radiation effects,Electrons,MOSFET,Logic gates,Annealing,Silicon carbide,Tunneling,Charge carrier lifetime,Couplings,Threshold voltage,4H-silicon carbide (SiC),coupling effects,electron irradiation,short circuit (SC) characteristics
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