Bauman Moscow State Technical University

Severe acute pancreatitis (SAP) is a life-threatening condition marked by systemic inflammation, organ failure, and high morbidity. Nutritional support plays a critical role in SAP management, with total enteral nutrition (TEN) and total parenteral nutrition (TPN) being the primary approaches. While TEN maintains gut integrity and may reduce complications, TPN bypasses the gastrointestinal tract and may worsen systemic inflammation. This study aimed to perform an updated systematic review and meta-analysis comparing the efficacy and safety of TEN versus TPN in SAP patients. Following PRISMA guidelines, we searched PubMed, Scopus, and Web of Science for randomized controlled trials and cohort studies comparing TEN and TPN in SAP. Outcomes included infection rate, organ failure, mortality, necrosis, surgical intervention, hospital stay, and serum markers (amylase, lipase, albumin, IL-6). Quality assessment was done using ROB2 and NOS tools. GRADE methodology was applied to assess evidence certainty. A total of 23 studies involving 7,674 patients (2,750 TEN and 4,924 TPN) were analyzed. TEN was significantly associated with lower odds of infection (OR = 0.35; 95

Alpha-tantalum on silicon is a promising platform for high-coherence superconducting quantum circuits. However, the growth mechanism of alpha-tantalum on silicon remains poorly understood. We present a comprehensive study on alpha-tantalum film growth on various substrates. The decisive role of a substrate material Debye temperature on the phase selection mechanism in tantalum film growth is experimentally confirmed, contradicting the prior assumptions on substrate temperature influence. Crucially, we confirm that alpha-tantalum starts growing only after a 7-10- nm-thick beta-tantalum sublayer. It results in ranging the critical temperature of alpha-Ta films from 3.77 to 4.39 K for the total thickness from 20 to 150 nm, respectively. Finally, we compared high-quality Al and Ta coplanar resonators on silicon, demonstrating compact tantalum resonators (4/10.5/4 mu m) with an internal quality factor exceeding 10 & times; 10(6) at single-photon excitation powers.

Microwave quantum memory represents a critical component for quantum radars and resource-efficient approaches to quantum error correction. Superconducting microwave resonators provide highly efficient storage, long coherence times, on-demand reading, and even memory pulse engineering, but it is still challenging to overcome design and materials induced loss channels for on-chip realization. In this Letter, we present a novel architecture of integrated superconducting quantum memory with a dynamically controlled RF-SQUID coupling element in pulse regime, thus ensuring high efficiency storage and cycling storage time. It demonstrates a memory cycle time of 1.51  μs and 57.5(4)% storage fidelity with preservation of the stored pulse shape during the retrieval at single-photon level excitations. We establish that while the proposed active coupler realization introduces no measurable fidelity degradation, the primary limitation arises from impedance matching and materials imperfections. Still the device was used only for storing finite-duration near-single-photon classical microwave pulses, we assert that it operates as a linear device when the photon population in the common resonator remains low so it should be compatible with quantum state storage. The proposed architecture highlights a disruptive potential for on-chip qubit and memory integration for scalable quantum error correction, while identifying specific avenues for near-unity storage fidelity.

Local hydrostatic stresses and nanograin dimensions were for the first time simultaneously measured inside sub-micron-thick sulfur-implanted (1018-1021 cm-3)/ nanosecond-laser annealed surface silicon layers, using a combination of complementary Raman and near-IR transmission spectroscopy methods. Alternating negative spectral shifts of near-IR indirect absorption edge at the lower concentrations (1018-1019 cm-3) and positive shifts at the higher concentrations (1020-1021 cm-3) were related to local tensile and compressive hydrostatic stresses in the layers, respectively. Quantitatively accounting for the stress effect on the "red" optical-phonon Raman band shifts, grain dimensions were measured in the laser-annealed hyperdoped layers as a function of sulfur concentration in good agreement with the Hall-effect derived mean free path values for free carriers. Raman spectroscopy when facilitated by near-IR transmission spectroscopy, enables the innovative non-contact structural insight into the stress, nanostructure and carrier transport properties of the hyperdoped layers.

Diamond/Cu composites have attracted considerable attention for thermal management applications due to their outstanding thermal conductivity. Recent studies have demonstrated that interconnected diamond network structures can significantly enhance the heat conduction of diamond/Cu composites, while the underlying microscopic heat transfer mechanisms remain to be fully elucidated. This study employed machine learning molecular dynamics simulations to validate and elucidate the heat conduction enhancement mechanisms of interconnected network structures. We developed a machine learning potential for diamond/Cu heterostructures based on the neuroevolution potential model and calculated the lattice thermal conductivity (LTC) of two series of network structures: diamond network/Cu (DN/Cu) and Cu network/diamond (CuN/D). The results demonstrate that DN/Cu exhibits monotonically increasing LTC with diamond content due to continuous heat transfer channels, while CuN/D shows non-monotonic behavior with a minimum LTC at intermediate diamond fractions, originating from the competitive mechanism between contributions from low-frequency Cu phonons (0-8 THz) and high-frequency diamond phonons (10-40 THz) to thermal transport. Through spectral LTC decomposition and wavelike phonon transmission analysis, we elucidated the suppressive effects of multiple heat transfer mechanisms on LTC, including phonon interfacial scattering, coherent interference effects, and total internal reflection in nano-network structures. This work establishes quantitative design thresholds for lattice thermal transport in DN/Cu, revealing a critical diamond volume fraction of similar to 30% above which DN/Cu consistently outperforms CuN/D, and an unexpected LTC minimum at similar to 50% diamond in CuN/D structures driven by phonon frequency competition. These findings explain why diamond network structures, despite demonstrating significant heat conduction enhancement compared to dispersed particles, still exhibit LTC values substantially lower than pure diamond, thus revealing substantial room for design optimization of network architectures.