Carbon fiber reinforced polymer (CFRP) composites have been extensively utilized in the aerospace industry owing to their advantageous properties, including low weight, high strength and stiffness, excellent fatigue resistance, and design flexibility. However, their inherent lack of sufficient electrical conductivity presents a fundamental challenge concerning lightning strike damage. Both the direct physical damage and indirect electromagnetic effects induced by lightning strikes pose severe threats to flight safety. Conventional protection strategies employing metallic layers are often hindered by issues such as increased weight, susceptibility to corrosion, and interfacial compatibility problems with the composite substrate. Previous review articles have primarily focused on the testing and characterization of CFRP lightning damage, its manifestations and mechanisms, as well as simulation and prediction techniques. Other reviews have summarized research progress in enhancing the electrical conductivity of CFRP in various dimensions. Nonetheless, a systematic discussion dedicated specifically to non-metallic solution strategies for CFRP lightning strike protection (LSP) remains absent. Herein, this article provides a comprehensive review of the experimental research literature concerning non-metallic LSP approaches for CFRP. The reviewed strategies primarily encompass the fabrication of surface conductive layers, blending with nanofillers, fiber surface modification, interlayer enhancement, and the use of intrinsically conductive polymers and composites. Furthermore, this review discusses the existing challenges for LSP-CFRP, particularly regarding the balance between mechanical and electrical properties, process feasibility, and the need for multi-scale validation. It aims to offer valuable insights for the design and fabrication of high-performance, lightweight resin-based composites with integrated lightning protection capabilities.
Carbon fiber reinforced polymer composites (CFRPs) demonstrated enormous potential for applications in defense, aerospace, and high-end civilian products, owing to their lightweight, high strength, high modulus, and excellent high-temperature resistance. However, the surface of carbon fiber (CF) was chemically inert and lacks active functional groups, which resulted in poor interfacial bonding with polymer matrix. Consequently, the overall performance of the composites was limited. To address this question, various surface modification techniques have been developed to improve the surface reactivity, roughness, and wettability of CF. These improvement strategies had enhanced the interfacial adhesion between CF and the matrix, thereby improving the mechanical, electromagnetic and thermal properties of CFRPs. In recent years, graphene oxide (GO) has gained attention as a key nanomaterial for improving the interfacial and mechanical performance of CFRPs. This was attributed to its outstanding mechanical properties and abundant surface functional groups, such as hydroxyl and carboxyl groups. This review systematically summarised the main methods of modifying the surface of CF using GO and elucidated the mechanisms by which these modifications affect interfacial properties. Finally, we outlined the current challenges and future development trends in interface modification technology, aiming to provide theoretical guidance and technical support for the interfacial design and application of high-performance CFRPs.
High-performance two-dimensional (2D) semiconductors are promising candidates for next-generation electronics, yet the severe self-heating limits their reliable operation under high-power conditions. Herein, we demonstrate that the h-BN encapsulation provides an efficient route for the electrothermal optimization of PdPS field-effect transistors (FETs). The h-BN encapsulated devices exhibit markedly enhanced heat dissipation, showing a threshold power density of 0.2 MW/cm2 at a current density of 0.87 MA/cm2 and an electric field of 19 MV/m, far exceeding the 0.033 MW/cm2 limit obtained on SiO2 substrates. Direct temperature measurements reveal that h-BN encapsulation significantly suppresses the channel heating, with the operating temperature decreasing systematically as the h-BN thickness increases. We further measured the thermal boundary conductance (TBC) between the PdPS channel and different substrates, obtaining values of 25 MWm−2K−1 for PdPS/oxide and 28 MWm−2K−1 for PdPS/h-BN. Moreover, our finite element simulations further demonstrate that the high in-plane thermal conductivity of h-BN enables efficient lateral heat spreading, which serves as the primary thermal contribution to the enhanced thermal robustness. These findings provide quantitative guidance for thermal management in high-power 2D electronic devices.
Two-dimensional (2D) transition metal dichalcogenides (TMDs) offer a versatile platform for band-structure engineering and nanoelectronic device design. Among them, bilayer PtTe2 resides at the boundary between metallic and semiconducting behavior, providing a unique opportunity for electrically controlled phase modulation. Here, we show that a perpendicular electric field opens a bandgap in bilayer PtTe2 and modulates interlayer coupling, making an expanded semiconducting configuration energetically favorable relative to the equilibrium metallic state. Density functional theory calculations combined with electric-field-dependent nudged elastic band analysis reveal that a perpendicular field of 2.5 MV/cm shifts the interlayer energy landscape and stabilizes a semiconducting configuration with a bandgap of similar to 0.44 eV. Non-equilibrium Green's function transport simulations reveal that this field-control interlayer modulation simultaneously induces (i) bandgap opening, (ii) modification of band-edge curvature and effective mass, (iii) enhanced electrostatic carrier depletion, and (iv) an evolution from effectively ohmic-like carrier injection in the metallic ON state to increasingly barrier-limited injection in the semiconducting OFF state. These mechanisms explain the coexistence of a relatively steep subthreshold swing and a large ON/OFF current ratio, while preserving metallic transport in the ON regime. The device remains within the thermionic regime, improving the practical steep-slope trade-off between switching efficiency and ON-state current rather than surpassing the Boltzmann limit. These findings identify field-controlled interlayer modulation in bilayer PtTe2 as a promising mechanism for improving the balance between switching efficiency and ON-state conductivity in nanoscale electronic devices.
Ultrasensitive photodetectors, capable of operating without external power sources, are essential for future applications in wireless surveillance, weather forecasting, remote monitoring, and power-constrained environments. This study introduces, for the first time, an island-like design for self-powered and ultrasensitive photodetectors based on 3C-SiC/Si heterojunctions. The proposed architecture enables electron confinement, effectively suppressing lateral diffusion losses and maximising carrier collection at the electrodes, while providing short and unobstructed pathways for efficient charge carrier transport. The fabricated device operates under zero external bias and demonstrates an outstanding performance at 637 nm wavelength, including a photoresponsivity of similar to 0.34 A W-1, detectivity of similar to 1.77x10(11) Jones, external quantum efficiency (EQE) of similar to 65%, and fast rise and decay times of 390 and 460 mu s respectively. These results highlight the significant potential of advanced architectural designs for energy harvesters, micro/nanoelectromechanical systems, and sensing applications. Furthermore, this work lays the foundation for developing next-generation optoelectronic devices by employing electron-confined structures in diverse semiconductor materials to achieve exceptional performance.
Colloidal quantum dots (CQDs) enable heterogeneous integration with silicon, effectively extending spectra of silicon-based photodetectors to achieve broadband detection spanning from the visible to the infrared spectrum. In this study, we fabricated a broadband photodetector covering wavelengths from 400 nm to 2630 nm by stacking silicon photodiode with HgTe CQD photodiode. Conventional hetero stacking often leads to band mismatches and charge transport barriers at the interfaces, significantly constraining device performance. To mitigate these issues, we implemented interfacial engineering by introducing silver nanoparticles (Ag NPs) at the heterojunction conductive layer interface. This modification optimizes the interfacial band alignment, enhancing carrier mobility and separation efficiency, ultimately improving overall photodetector performances. Systematic screening of Ag NPs based on size and thickness revealed that a bilayer structure with a 10 nm diameter of Ag NPs achieved optimal enhancement. Compared to the reference device, the photogenerated current to dark current ratio increased by 430%. The total photocurrent density of the broadband detector showed a 27% improvement, with specific increases of 52% in the visible light region and 16% in the near-infrared region. Notably, the calculated specific detectivity reached 1.70 & times; 1011 Jones at 2200 nm under room temperature conditions, accompanied by a fast response time of 10.8 mu s and a 3 dB bandwidth of 275 kHz. Leveraging this high-performance broadband photodetector, we further developed a visible-to-infrared optical anticounterfeiting and encryption system capable of high-fidelity data preservation.
Machine learning (ML) plays a critical role in semiconductor process monitoring by enabling manufacturers to manage the complexities of mass production, including ensuring yield and reducing turnaround time (TAT). However, measurement sampling to reduce cost and TAT introduces many missing values that degrade ML model performance. Conventional imputation methods rarely capture the unique interdependencies in semiconductor electrical parameter measurement (EPM) data, thereby limiting accuracy. This study proposes stepwise and selective missing-value imputation approaches for ML-based process monitoring and diagnosis of dynamic random-access memory (DRAM) peripheral devices. These methods utilize mutual information between parameters for informed selection and sequencing of parameter imputation, focusing on missForest (MF) and multivariate imputation by chained equations (MICE). Compared with universal imputation, stepwise-selective MF and selective MICE reduce the normalized mean absolute error by 22.90% and 2.51%, respectively, and improve both prediction and classification accuracy. Furthermore, this study validates a novel application to correcting DRAM device EPM outliers arising from measurement errors. Imputing outliers as missing values improves the model R2 score by 4.02% compared with the standard practice of sample removal, enhancing model robustness, particularly in data-scarce DRAM device scenarios. The approaches are verified in the latest 1Y-nm node DRAM test vehicles with baseline and split tests, which introduce high-k metal gates with a minimum gate length of 1A-nm node for further node scaling. Overall, this study presents a practical solution for managing nanoscale variabilities and improving productivity in mass production, contributing to a robust ML-based monitoring framework for future DRAM device manufacturing.
Multiferroic (1-x)Ba0.83Ca0.17Zr0.12Ti0.88O3+xMn(0.5)Ni(0.1)Zn(0.4)Gd(0.03)Fe(1.97)O(4) composites [abbreviated as (1-x)BCZTO+xMNZGF, with x = 0.0, 0.1, 0.2, 0.3, 0.4, 0.5 and 1.0] were fabricated, and their lattice structure, surface morphology, magnetoelectric, dielectric, ferroelectric and magnetic response were thoroughly examined and analyzed. The XRD spectra confirm the simultaneous presence of BCZTO and MNZGF phases in all composites, with no detectable impurity peaks, suggesting a structurally stable system that promotes robust magnetoelectric coupling through enhanced interphase interaction. The Rietveld refined XRD patterns for all compositions obtained goodness-of-fit (X-2) values close to 2, confirming a high degree of reliability and excellent fitting quality. The composite sample with x = 0.2 demonstrates the lowest porosity among all the studied composites. The FESEM micrographs of the composite samples display two distinctly identifiable grain types, indicating the coexistence of two separate phases with no indication of interphase reactions. The dielectric study reveals that samples containing a higher proportion of the BCZTO phase exhibit increased dielectric constants (epsilon'). Notably, the composite with x = 0.2 demonstrates the largest ac resistivity and the minimum dielectric loss among the investigated composites. The P-E loops of the samples with x > 0.2 become progressively more rounded as ferrite content rises, implying a deterioration in polarization behavior at higher ferrite concentrations. The composite sample with x = 0.2 achieved the largest magnetoelectric voltage coefficient (alpha(ME)) of 206 mV & centerdot;cm(-)& sup1;& centerdot;Oe(-)& sup1;, suggesting its viability for use in versatile technologies, including magnetoelectric sensors, spintronic devices, and energy harvesting systems.
Pyroelectric detectors are widely employed as uncooled infrared sensors. However, their conventional capacitorbased design generates weak electrical signals, requiring complex external amplification that limits integration density and signal-to-noise ratio. Here, we design and fabricate suspended pyroelectric-ferroelectric field-effect transistors (Pyro-FeFETs) featuring a monocrystalline lithium tantalate (LiTaO3) gate dielectric and a graphene channel. Infrared-induced temperature variations alter the ferroelectric spontaneous polarization in LiTaO3 due to perturbation of its internal dipole alignment. This ferroelectric polarization change effectively modulates the carrier concentration and conductivity of the graphene channel, resulting in a measurable current signal through the source-drain electrodes. Leveraging inherent nonlinear signal amplification of field-effect transistors and a suspended micro-bridge for enhanced thermal isolation, the device achieves uncooled blackbody infrared detection with a specific detectivity of 1.4 & times; 109 cm Hz1/2 W- 1 and a response time of 51/38 ms. This integrated sensing-amplification architecture establishes a promising architecture for highly sensitive and compact uncooled infrared systems.
In this work, we employ analytical models and TCAD simulations to investigate Hf0.5Zr0.5O2 (HZO)-based ferroelectric capacitors with and without Al2O3 interlayers, systematically examining the roles of Ginzburg-Landau-Khalatnikov (GLK) parameters, interface charge compensation, domain formation, and grain structure. We demonstrate that basic GLK models predict complete loss of ferroelectricity in the presence of oxide when using HZO parameters extracted from oxide-free devices, in dramatic disagreement with experimental reports showing robust ferroelectric behavior. Attempts to remedy the situation by simple reparametrization will lead to unphysical parameter values. Our results demonstrate that a realistic multi-grain model incorporating interface defect physics and modest variations in ferroelectric parameters is essential to accurately describe experimental devices. Specifically, interface charge compensation via defect traps stabilizes polarization by neutralizing depolarization fields, while multi-grain structures with grain-to-grain variations in coercive field reproduce the experimentally observed gradual switching and increased coercive voltage. This framework provides a physically motivated approach for predictive TCAD simulations of HZO-based ferroelectric devices for advanced computing applications.
Achieving fast and highly sensitive ultraviolet-C (UVC) detection under ultra-weak illumination remains challenging due to inefficient carrier separation and severe interfacial recombination in wide-bandgap semiconductors. Here, we report an interface-engineered Ga2O3-based photodetector by integrating p-type NiO quantum dots (p-NQDs) onto an n-type Ga2O3 channel to form a surface-type heterojunction. The introduction of the p-NQDs modifies the interfacial energy landscape, leading to enhanced built-in electric fields and suppressed recombination at the Ga2O3 surface. Benefiting from the type-II band alignment and interfacial modulation, the heterojunction device achieves an ultralow dark current of similar to 10(-14) A, a high responsivity of 4.66 A/W, and a detectivity of 5.56 & times; 10(14) Jones under 254 nm illumination. Time-resolved measurements reveal a significantly accelerated photoresponse with rise and decay times down to tens of milliseconds, indicating improved carrier transport dynamics compared with pristine Ga2O3 devices. Furthermore, a proof-of-concept single-pixel UVC imaging demonstration confirms high-contrast spatial mapping capability under weak illumination. These results suggest that quantum-dot-assisted interfacial engineering provides an effective strategy for modulating carrier dynamics in oxide semiconductors, offering insights for the development of high-sensitivity solar-blind UVC photodetectors.
In this work, a n-beta-Ga2O3/p-GaN heterojunction diode was fabricated and investigated by integrating p-type GaN with n-type beta-Ga2O3, thereby overcoming the intrinsic limitation of achieving stable p-type doping in this material. The beta-Ga2O3 layers were grown on the GaN templates on sapphire substrate by metalorganic chemical vapor deposition, forming a sharp heterojunction interface. The fabricated devices exhibited clear rectifying behavior with a turn-on voltage of approximately 3.2 V and an specific on-resistance of 31.2 Omega & sdot;cm2. By employing a finger-pattern layout, the ideality factor is improved from 2.89 to 1.85, and the breakdown voltage is enhanced from 522 V to 645 V, indicating uniform current spreading and electric-field distribution. In addition, performed TCAD simulations support the experimental results and confirm that the developed n-beta-Ga2O3/pGaN heterojunction exhibit the intrinsic properties and electrical characteristics suitable for high-voltage power electronic applications.
This paper provides a systematic review of recent advances in the interphase research for silicon carbide fiber reinforced silicon carbide (SiCf/SiC) composites. The critical role of the interphase as a key transitional layer between the fiber and the matrix is elucidated, specifically in regulating the interfacial bonding strength and enabling crack deflection to impart non-brittle fracture behavior to the composite. Pyrolytic carbon and hexagonal boron nitride are presented as two representative examples of conventional interphases, which are summarized in this work. Furthermore, the advantages, limitations, and fabrication methods associated with various interphase design strategies are described, including weak interfaces, layered crystalline structures, multilayers, and porous architectures. And, the main preparation techniques are elaborated, among which chemical vapor deposition/infiltration and precursor pyrolysis conversion are the most representative processes. Additionally, micromechanical characterization techniques at the micro/nano scale, ranging from single-fiber push-out/push-in testing to micropillar compression testing, as well as microstructural and compositional analysis methods utilizing coupled instrumental approaches, are critically reviewed. The application of multi-scale numerical simulations, primarily based on molecular dynamics and the finite element method, for revealing interfacial behavior and predicting performance is also discussed. Finally, the trend in interphase research is prospected, highlighting its evolution from a sole load-bearing function toward integrated structure-function capabilities. Notable recent advances in emerging areas, such as load-bearing integrated with electromagnetic property regulation, are emphasized. This review provides a significant reference for the rational design and tailored development of high-performance interphases in SiCf/SiC composites.
Indium-based oxide semiconductors are promising materials for next-generation display backplanes owing to their high intrinsic carrier mobilities. However, their strong tendency to crystallize and excessive carrier generation often reduce the device uniformity and reliability. In this study, nitrogen-doped indium-rich indium gallium oxide (IGO) thin films were fabricated via plasma-enhanced atomic layer deposition (PEALD) using N2O plasma. Nitrogen incorporation effectively suppressed crystallization and passivated the oxygen vacancies, which produced stable amorphous films, even after annealing at 400 degrees C. The prepared IGO thin-film transistors (TFTs) exhibited a high mobility of 55.3 cm2/V center dot s, a normally off threshold voltage of 0.7 V, and a steep subthreshold swing of 85 mV/dec. Nitrogen doping increased the threshold voltage uniformity by 90% (standard deviation = 42 mV). Moreover, the bias-stress stability improved by 79% under positive bias temperature stress and 83% under negative bias temperature stress, with small shifts in the threshold voltage of 0.23 and 0.04 V, respectively. These improvements were attributed to the formation of a grain boundary-free amorphous network and the reduction of deep-level traps through controlled nitrogen doping. This study demonstrates that PEALD-based nitrogen incorporation offers a simple and scalable route for realizing high-mobility, uniform, and reliable amorphous oxide TFTs for future display technologies.
The performance of gate-all-around field effect transistors (GAA FETs) are increasingly critical in 1.5 nm technology nodes, particularly for high-frequency wireless systems that operates across variable thermal environments. The impact of varying operating temperatures considering devices subjected to radiation effect are analysed for newly developed nanosheet and nanowire channel GAAs. GaN is utilized as the channel material due to its superior thermal conductivity and high breakdown field ensuring stable operation even under elevated temperatures. Device performance metrics including subthreshold swing (SS), switching speed, transconductance, and DIBL are extracted across a temperature range of 300 K to 500 K. Nanowire cylindrical GAA FETs exhibit superior electrostatic control with a reduction in SS to 60.54mV/dec at 300 K and off-state current to 5.31 & times; 10 -16 A/& micro;m. With increasing temperature (500 K), the SS rises to 63.54 mV/dec in nanosheet devices, while in nanowire GAA FET SS is 62.05mV/dec, indicating stronger thermal resilience for GaN based material. The 2 nm gate underlap wrapped with high-k spacer effectively suppresses DIBL and reduces various leakages. Cut-off frequency (f T ) analysis reveals that Nanowire GAA FETs achieve a peak value of 17.41THz, outperforming the Nanosheet GAA which reaches 15.15THz under identical biasing conditions at 300 K. The enhanced performance of nanowire devices is attributed to their stronger electrostatic control, no corner effects, larger conduction area, and improved field distribution, enabling superior high frequency characteristics and robust thermal behavior. These results demonstrate the potentiality of optimized GaN nanowire GAA FETs for nextgeneration RF front-end modules and advanced logic circuits even under elevated thermal stress.
Planar integrated-circuit architectures, optimized for processing features on two-dimensional wafers, have historically delivered rising density and performance. However, continued planar scaling is increasingly limited by leakage/short-channel effects, escalating power density and thermal constraints, while heterogeneous blocks (passives, logic, sensors, memory, and power) compete for chip area, restricting system-level functional density. Thin-film self-rolling offers a deterministic 3D assembly route that converts planar-fabricated nanomembranes into tubular architectures through strain relaxation after sacrificial-layer release. The resulting 3D microtubes enable drastic footprint reduction, tunable diameter and winding number, and new electrical/optical/magnetic coupling geometries, while retaining strong CMOS compatibility. In this review, we summarize leading fabrication strategies for rolled-up on-chip devices, contrasting external-force-assisted rolling with more controllable internal strain-gradient approaches and comparing wet versus dry release routes for integration yield and manufacturability. We then survey fundamental rolled-up components (capacitors, inductors/transformers, and resonators) and benchmark representative performance against state-of-the-art planar counterparts. Next, we review rolled-up sensors and active devices, spanning integrated FET microtubes, photodetectors, and magnetoresistance sensors, followed by information storage/processing concepts such as tubular magnetic domains and rolled-up racetrack memories. We further discuss rolled-up microenergy devices (supercapacitors and microbatteries) and outline key hurdles, such as ohmic loss, heat accumulation, and packaging, together with emerging mitigation strategies. Looking forward, co-integrating heterogeneous rolled-up building blocks into unified tubular circuits could provide a practical beyond-Moore pathway toward compact, multifunctional electronics. Continued advances in materials, wafer-scale yield, and 3D packaging will be pivotal for translating rolled-up architectures into impactful hardware for sensing, communication, and computing.
Early-stage pressure ulcer monitoring is critical for patient quality of life and healthcare resource optimization, yet current manual methods are resource-intensive, time-consuming, and inaccurate, while existing wearables only measure superficial parameters and fail to detect early deep tissue damage. To address this gap, we present a fully integrative wearable multimodal microfluidic biosensor system for real-time assessment of hypoxic metabolism and pressure ulcer risk-with distinct advantages in clinical usability and sensing performance-which features autonomous static sweat induction via iontophoresis, integrates four core modules of sweat induction, multimodal sensing, signal processing and wireless communication into a compact, skin-conformal patch, and facilitates an automated "induction-sampling-detection-alert" workflow without external auxiliary devices, making it particularly suitable for bedridden or mobility-impaired populations. Fabricated via low-cost scalable laser processing, the system synergizes electrochemical and near-infrared technologies to concurrently quantify sweat lactate 0-80 mM with a limit of detection (LOD) of 0.75 mM, pH with a near-Nernstian response of 62.8 mV/pH, skin temperature a LOD of 0.086 degrees C, and regional tissue oxygenation (rSO2), with real-time calibration ensuring accuracy and wireless smartphone connectivity enabling remote monitoring. Electrochemical characterizations and human trials validate reliable tracking of pressure-induced hypoxia-related dynamics, offering a non-invasive, personalized early warning tool with high translational potential.
The progressive miniaturization of solder joints in electronic devices has been a continuous trend for recent years. Solder joints on Printed Circuit Boards (PCBs) have been steadily decreasing, to enable higher interconnect density and increased functionality within a single device. More recently, the adoption of heterogeneous integration and chiplet-based packaging has driven solder joint dimensions even smaller, –into the sub-100 µm range. Electrical current loads on these connections however have not been reduced at the same rate, as the sizes. Due to this, the electrical current densities within the solder joints have increased. The increase of the electrothermal load on the components from the high current densities could promote electromigration behaviour. During electromigration solder joints can sustain damage through multiple mechanisms. The interfacial Intermetallic Compounds (IMCs) could thicken, voids could form, and Cu pad dissolution can be observed. These effects could significantly reduce the reliability of the solder joints by reducing the mechanical strength of the joint. This review aims to explore and summarize the existing literature on electromigration and its associated effects, addressing a gap in the currently available studies. It provides a general overview of electromigration behaviour, outlines the atomic fluxes involved in the process, and examines electromigration effects in various solder types, which may exhibit different failure mechanisms. Additionally, the review discusses the influence of direct current (DC), pulsed DC current (PDC) and alternating current (AC) and concludes with an overview of methods to enhance the electromigration robustness of solder joints.
Over the past decade, as an important narrow-band semiconductor material with unique physical and chemical properties, InSb shows great potential for applications in several cutting-edge scientific and technological fields, such as infrared detection, terahertz technology, and quantum computing. In this paper, we comprehensively review the major growth methods of InSb materials, including Czochralski (CZ) method, molecular beam epitaxy (MBE), metal-organic chemical vapor deposition (MOCVD), and CBE method. The growth mechanism, process characteristics, advantages and disadvantages of each method, as well as its performance in practical applications are discussed in detail. Meanwhile, the article provides an in-depth analysis of the key performance indicators of InSb materials in high-performance device applications and summarizes the challenges faced in large-scale production, impurity control, crystallization quality and large-area uniformity. Finally, it looks into the future development direction of InSb growth technology, and proposes strategies to further enhance the performance and application scope of InSb materials through the exploration of novel growth methods, optimization of existing technologies, and development of composite materials to meet the needs of future scientific and technological development.
