ABSTRACT As oxide semiconductors are increasingly considered for BEOL (Back‐End‐of‐Line)‐Compatible logic applications, aggressive channel scaling is required to improve electrostatic control and mitigate short‐channel effects. However, realizing ultrathin oxide channels with high uniformity and controllable electrical characteristics remains challenging, particularly under a limited thermal budget. In this work, we fabricated 1‐nm‐thick In 2 O 3 thin‐film transistors using atomic layer deposition at 150°C and subsequently tuned their electrical properties by xenon flash lamp annealing (XFLA). The XFLA treatment systematically shifted the threshold voltage in the negative direction while improving switching stability and device uniformity. Optimized devices exhibited reduced hysteresis from 1.5 to 0.76 V and improved positive‐bias‐stress stability, with the threshold‐voltage shift decreasing from 4.4 to 2.1 V after 3600 s. X‐ray photoelectron spectroscopy revealed an increase in the oxygen‐vacancy‐related component from 28.4% to 33.8% after XFLA, indicating that high‐energy photon irradiation effectively modulates defect states in the ultrathin In 2 O 3 channel. Finally, by combining pristine and XFLA‐treated transistors, we demonstrated NMOS inverter operation at both 5 and 40 V, achieving a maximum voltage gain of 30. These results suggest that high‐energy‐photon‐induced defect engineering provides an effective route for threshold‐voltage control and circuit implementation in ultrathin oxide transistors for BEOL‐Compatible logic applications.
ABSTRACT Liquid crystals (LCs) require precise alignment for advanced photonic applications, with photoalignment offering a powerful route for complex spatial patterning. While recent studies demonstrate that Brilliant Yellow (BY) photoalignment layers can induce out‐of‐plane (homeotropic) anchoring via a two‐step illumination process, these approaches typically necessitate thick BY films that limit device transparency. In this work, we present an optimized two‐step laser illumination technique utilizing a spatial light modulator (SLM) and local exposure to circularly polarized laser light to precisely pattern alternating planar and homeotropic domains. Crucially, we introduce the application of an AC electric field across the LC layer during the second illumination step. This field reorients the LC, strongly minimizing the phase retardation of the propagating laser beam and significantly reducing the required exposure dose to induce homeotropic alignment. Utilizing this technique, we relax the need for thick films, successfully demonstrating versatile micro‐patterns–such as gratings and checkerboards–using a highly transparent alignment layer. Furthermore, we demonstrate that this approach enables improved in‐plane rewritability of the planar aligned regions. Ultimately, this methodology provides a highly controllable and transparent platform for developing next‐generation spatially patterned LC devices.
ABSTRACT The development of next‐generation high‐energy‐density lithium batteries increasingly relies on high‐capacity anodes, particularly lithium metal and high‐content silicon, to surpass the energy limits of conventional lithium‐ion batteries. Despite their exceptional theoretical capacities, both anodes undergo severe mechanical deformation during cycling, including localized strain and volumetric expansion, leading to repeated fracture of the Solid Electrolyte Interphase (SEI). The resulting interfacial instability accelerates electrolyte decomposition, active lithium loss, dendrite growth, and rapid capacity degradation. Although Artificial Solid Electrolyte Interphases (A‐SEIs) have emerged as a promising strategy to stabilize these interfaces, current designs primarily emphasize electrochemical stability while overlooking the mechanical and processing requirements that govern long‐term durability and industrial translation. This review presents a practical engineering framework that decouples chemical passivation from structural stability by integrating interfacial mechanics, transport characteristics, and manufacturing considerations. By consolidating experimental observations, critical strain limits, and dominant failure mechanisms across representative A‐SEI architectures, it establishes quantitative design principles and practical selection criteria for mechanically robust artificial interphases. These guidelines provide a design checklist for developing A‐SEIs that are chemically stable, mechanically resilient, and compatible with scalable battery manufacturing.
ABSTRACT Cardiac in vitro models are powerful tools for studying cardiac development, disease mechanisms, drug screening, and regenerative therapies. However, the available extracellular matrix substitutes do not promote optimal contractility of the embedded cardiomyocytes. This study hypothesizes that functionalizing fibrin–gelatin hydrogels with reduced graphene oxide (rGO) will significantly improve the synchronized contraction and enhance in vitro vascularization. To test this hypothesis, fibrin and fibrin–gelatin hydrogels containing different concentrations of rGO are analyzed for the mechanical properties, microstructure, prevascularization potential, and contraction behavior of the embedded cultures of cardiomyocytes (CMs), endothelial cells, and fibroblasts. In addition, the responses of the CMs to cardioactive drugs are investigated. Increasing rGO concentration enhanced the storage modulus, vascular lumen diameter, and cardiomyocyte contraction amplitude up to 0.04% (w/v) rGO in fibrin–gelatin blends, whereas higher concentrations were associated with reduced effects. Furthermore, engineered cardiac tissues show physiological responses to cardioactive drugs. Compared to classical 2D and spheroid cultures, hydrogel‐based cardiac cultures demonstrate increased cardiac‐ and vascular‐related gene expression. In conclusion, functionalizing fibrin–gelatin hydrogels with rGO is a promising cardiac tissue engineering strategy because the modified blend supports cardiac functional properties.
ABSTRACT Radiation‐stable materials are crucial for electronics and optoelectronic systems operating in extreme environments, including space and nuclear applications. This work presents a comprehensive comparative study of the radiation stability of carbon nanowalls (CNWs) and nitrogen‐doped CNWs (N‐CNWs) under 0.5 MeV proton irradiation over an extended fluence range of 10 13 –10 15 p·cm −2 . Morphological analysis confirmed that both samples preserve their interconnected three‐dimensional network without signs of structural degradation even at the maximum fluence. Raman spectroscopy further revealed that both systems retain their graphene‐like structure with only moderate defect evolution and no evidence of amorphization. X‐ray photoelectron spectroscopy (XPS) analysis demonstrated the overall chemical stability of both materials, accompanied by a radiation‐induced redistribution of sp 2 /sp 3 states. Ultraviolet photoelectron spectroscopy (UPS) measurements revealed an increase in the work function and a shift of the Fermi level for both CNWs and N‐CNWs, indicating modification of the surface electronic structure under irradiation. Optical and electrical measurements demonstrated different radiation responses of the materials. For CNWs, dose‐dependent degradation of charge transport and optical properties is observed, whereas N‐CNWs demonstrate higher functional stability. The results obtained expand understanding of the radiation evolution of carbon nanostructures and confirm the promise of N‐CNWs for radiation‐stable electronics and optoelectronics.
