
The rise in technical features and capabilities of consumer electronics (CSE) devices ranging from smartphones, high fidelity (Hifi) radio systems, MP radio sets and IoT-enabled smart devices, have created new possibilities about their use and applications. You tube files can now be downloaded on smartphones and played directly on high fidelity audio radio sets through Bluetooth. There have also been increase in the use of smart phones in diverse areas of life such as in academics, industries etc., where the use of online lectures and video conference meetings have increased in recent times. It is evident that these technologies offer convenience and smart connectivity, on the downside however is the security concern resulting from these communications. Classical cryptography algorithms built into these consumer electronics are prone to quantum computing attacks, and with the steady growth of quantum computing and algorithms, it is only a matter of time before the current classical cryptography algorithms become obsolete. This aim of this paper is to design a light weight Ring Learning With Layered Errors Key Encapsulation Mechanism (RLWLEKEM), a CCA secure lattice based post quantum cryptography algorithm for consumer electronics (CSE) platform. Experiments were conducted on Raspberry Pi 5, which served as a representative testbed for resource constrained CSE devices. Results were gathered using the experimental test bed to compare the performance of RLWLEKEM with some selected cryptography protocols such as code based cryptography (CBC), and classical cryptography algorithms. Performance metrics used for comparison include encryption time, execution time, communication overhead and energy consumption. Experimental results show that RLWLEKEM outperforms the other compared cryptography protocols in terms of time to complete cryptography process, storage/communication overhead and energy consumption and thus was most suitable for deployment as post quantum cryptography key encapsulation mechanism on energy constrained CSE devices.
The frequency response of transistor amplifiers is a key performance characteristic that determines their suitability for broadband and frequency-selective applications. This study comparatively evaluates the performance of a conventional single-stage common-emitter transistor amplifier and a tuned single-stage common-emitter transistor amplifier using NI Multisim 11.0. Both amplifier configurations were designed and simulated under identical operating conditions using a 2N2222A NPN transistor, a 12 V supply, identical biasing networks, and the same passive components. The only design difference was the replacement of the collector resistor in the conventional amplifier with a parallel LC resonant circuit in the tuned amplifier. The frequency response of both amplifiers was evaluated over the frequency range of 10 Hz to 100 MHz, and the voltage gains were calculated from the simulated output waveforms and expressed in decibels (dB). The results showed that the conventional amplifier maintained a nearly constant mid-band gain of approximately 54 dB over a wide frequency range, demonstrating excellent broadband performance. In contrast, the tuned amplifier produced a maximum gain of approximately 72.04 dB at its designed resonant frequency of 1 kHz, but exhibited a much narrower bandwidth due to its frequency-selective characteristics. The comparative analysis confirms that the conventional amplifier is better suited for broadband signal amplification, whereas the tuned amplifier is more appropriate for narrow-band and radio-frequency applications requiring high gain at a specific frequency. These findings provide useful guidance for selecting suitable transistor amplifier configurations for broadband and frequency-selective electronic and communication applications.
The coupling technique employed in multistage transistor amplifiers plays a fundamental role in determining voltage gain, frequency response, bandwidth, and overall amplifier performance. Although resistance-capacitance (RC), transformer, and direct coupling are widely used in analog electronic systems, their comparative performance under identical operating conditions has not been comprehensively investigated. This study aimed to compare the performance of two-stage RC-coupled, transformer-coupled, and direct-coupled common-emitter transistor amplifiers using Multisim 11.0. Three amplifier configurations were designed using identical circuit parameters, including two 2N2222A NPN transistors, a 12 V DC supply, identical voltage-divider bias networks, collector and emitter resistors, and the same input signal conditions. The only difference among the circuits was the interstage coupling technique. Simulations were carried out over a frequency range of 10 Hz to 100 MHz, and the amplifiers were evaluated in terms of voltage gain, frequency response, bandwidth, waveform characteristics, phase relationship, and signal amplification behaviors. The simulation results showed that the RC-coupled amplifier exhibited the highest and most stable mid-band voltage gain of approximately 68 dB together with the widest useful bandwidth, making it the most suitable for general-purpose voltage amplification. The transformer-coupled amplifier demonstrated moderate performance with a peak gain around 100 kHz, indicating its suitability for impedance matching and efficient power transfer. The direct-coupled amplifier produced the lowest voltage gain under the selected operating conditions but retained the capability to amplify DC and very low-frequency signals because it does not employ coupling capacitors or transformers. The study concludes that the choice of coupling technique significantly influences transistor amplifier performance. RC coupling is the preferred technique for high-gain, wide-band voltage amplification, transformer coupling is advantageous for impedance matching and power amplification, whereas direct coupling is most suitable for DC and low-frequency instrumentation applications. These findings provide practical guidance for selecting appropriate coupling techniques in the design of multistage transistor amplifiers.
This study presents a smart grid architecture addressing challenges in renewable energy integration, including limited data use, fragmented analysis, and weak real-time control. The proposed multi-layer framework combines data input, multidimensional analysis, AI optimization, and output evaluation to improve performance. A MATLAB simulation models interactions among load demand, solar and wind generation, battery storage, and grid supply over 24 hours. Results show renewables contribute 60–75% of power, reducing reliance on fossil fuels. Battery storage balances supply and demand, while real-time monitoring, demand response, and automation enhance stability. Energy efficiency reaches about 92%, with lower transmission and distribution losses. Reliability indices (SAIDI 0.02–0.05 hours per customer and SAIFI 0.01–0.03 interruptions) indicate strong system resilience. Economic analysis shows savings of $60,000–$80,000 from reduced fuel use despite higher upfront costs. Environmental benefits include major carbon emission reductions. Socioeconomic impacts include job creation and improved energy access. Overall, integrating renewable energy with advanced smart grid technologies offers a sustainable, efficient, and economically viable solution that supports long-term energy resilience and climate objectives. This approach also enhances system flexibility by enabling adaptive control strategies under varying load and generation conditions, ensuring scalability and future integration of emerging energy technologies and digital grid innovations worldwide adoption.
This article examines the behavior of the quadri spectral method in the design of a pyrometer applicable to the heat treatment of metals. The quadri spectral pyrometer incorporates four different optical filters that filter the four spectra to be used and converge them towards the four detectors of the device. The light energy from these spectra will be converted by the detectors into a processable electrical signal. The application of the nonlinear model known as Temperature by Nonlinear Model (TNL) will calculate and select these four wavelengths. This method applies inverse calculus, exploiting Planck's relation for thermal radiation by setting the temperature and then determining the wavelengths using ordinary least squares. With this model, the four wavelengths will be selected sequentially by modeling the emissivity of the metal as a second-degree polynomial. The obtained wavelengths will be subjected to various criteria to choose the best groups for a suitable pyrometer intended for high-temperature metal treatment. Those criteria are flux sensitivity to wavelength and temperature, standard deviation at temperature, and the minimum difference between two successive wavelengths. The various tests against the criteria, given the non-linearity of the emissivity of metals, characterize the model in high temperatures in order to proceed with such a pyrometer design.