Особенности Конденсации Кремния На Поверхности Монокристалла Вольфрама

Using the methods of the field emission microscopy, the condensation of Si on the W surface at various temperatures T of the substrate and numbers n of monoatomic layers of the deposited condensate is studied. At low temperatures T ~ 600 K, a low-temperature Si-monolayer with the structure of pure W is formed on the surface, whereas another structure of a high-temperature monolayer, namely surface siliside is formed at T > 1000 K. The low-temperature monolayer and surface siliside are differ in their orienting effect when constructing the Si layers. In the case of condensation on a low-temperature monolayer, crystallites of Si are formed starting already from the third monolayer at n > 3, whereas the Si crystallites grow during the condensation on surface siliside starting from n > 300 monolayers. The energy activation of the volume diffusion Qdif of the Si-atoms into W and desorption Qdes from W surface are determined.