Российский государственный педагогический университет им. А.И. Герцена
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摘要
The dependences of the resistivity, magnetoresistance,and Hall coefficient on the sample thickness were studied forthin bismuth films on mica at 77 K. We discovered quantum sizeoscillations of electrical and galvanomagnetic properties for filmswith the thickness less than 50 nm. The charge carrier free path isestimated. The reasons for deviation of the observed experimentaldependences from the simple quantum size effect theory in thesemimetal films are discussed.