Туннельные Магниторезистивные Элементы Для Датчиков Магнитного Поля

The technology of fabricating of chains of tunnel magnetoresistive (TMR) elements based on CoFe/Al2O3/NiFe nanostructures with pinning on the antiferromagnetic IrMn layer has been developed. The dependence of the magnetoresistance curves on the geometrical parameters of the laterally bounded TMR contacts, as well as on the mutual orientation of the external magnetic field and the axis of the unidirectional anisotropy of the fixed CoFe layer has been investigated. The resistance of the chains has been varied from several tens of kΩ to hundreds of MΩ, depending on the thickness of the tunnel dielectric layer. The magnitude of the magnetoresistive effect has been about 10–15%. The suggested technology can be used to make tunnel magnetic field sensors