Диссипативное Туннелирование И Оптика Низкоразмерных Структур

The article introduces the investigation results of the influence of the type of cadmia selenide quantum dot (QD) surface processing on their photoluminescence. It is shown that the most active photoluminescence is demonstrated by QD with surface processed by the donor electronic impurity. The authors theoretically investigate the importance of QD impurity doping. The article proves that inthis case the intensiveness of photoluminescence significantly rises. The authors have also researched the influence of two-dimensional dissipative tunneling on the probability of two-photon ionization of the D --center in the system of two interactive quantum molecules. The article reveales the effects of 2 D -tunnel bifurcations and quantum beats for the case of parallel 2 D -tunneling, which may be observed in the corresponding field dependencies of the two-photon ionization probability.