Электрофизические Свойства Тонких Слоев Кремния На Сапфире, Полученных Методом Молекулярно-Лучевой Эпитаксии

The relations between the parameters of deposition, structure, surface morphology and electrophysical properties of MBE grown thin n-silicon on sapphire films have been established. A transitional layer has been found to form at the initial stages of silicon growth. This layer of thickness up to 0.3 ƒm is a mixture of block oriented crystallites and amorphous phase of silicon. The layer electrical conductivity has a barrier mechanism with an activation energy of 0.1-0.28 eV and small values of mobility 30-60 cm2/Vs. The dependence of formation of deep acceptors in silicon on layer thickness has been discovered.