A Low-Cost, High-Performance, High-Voltage Complementary BiCMOS Process

D. Knoll,B. Heinemann,K. E. Ehwald,A. Fox,H. Ruecker,R. Barth,D. Bolze,T. Grabolla,U. Haak,J. Drews,B. Kuck,S. Marschmeyer,H. H. Richter, M. Chaimanee,O. Fursenko,P. Schley,B. Tillack, K. Koepke,Y. Yamamoto,H. E. Wulf,D. Wolansky

2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2（2006）

IHP

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摘要

The authors demonstrate a low-cost, high-performance, high-voltage complementary SiGe:C BiCMOS process. This technology offers three npn SiGe:C devices with fT/BVCEO values of 40GHz/5V, 63GHz/3.5V, and 120GHz/2.1V together with a 32GHz fT/35GHz f max/ 4.4V pnp SiGe:C HBT by adding only three bipolar masks to the underlying RF-CMOS process. With two additional implant masks, a 150GHz, 2.2V npn HBT and either a 43GHz fT/ 65GHz fmax 4.2V pnp or a 38GHz fT/ 70GHz fmax, 5.8V pnp device can be fabricated additionally (in the npn case) or alternatively (pnp case) to the devices of the 3-mask module

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关键词

BiCMOS integrated circuits,Ge-Si alloys,heterojunction bipolar transistors,radiofrequency integrated circuits,120 GHz,150 GHz,2.1 V,2.2 V,3.5 V,32 GHz,35 GHz,38 GHz,4.2 V,4.4 V,40 GHz,43 GHz,5 V,5.8 V,63 GHz,65 GHz,70 GHz,BiCMOS integrated circuit,RF-CMOS process,SiGe:C,heterojunction bipolar transistors

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