A12O3 Optimization for Charge Trap Memory Application

C. Scozzari,G. Albini,M. Alessandri,S. Amoroso,P. Bacciaglia,A. Del Vitto, G. Ghidini, A. Grossi, A. Mauri,A. Modelli,R. Piagge,A. Sebastiani,P. Tessariol

2008 9th International Conference on Ultimate Integration of Silicon（2008）

STMicroelectronics

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摘要

Aim of this work is the study the crystallization treatment of Alumina used as blocking oxide in Charge Trap memories. We have found that thermal treatment before gate deposition is able to crystallize Alumina giving better erase and write efficiency than any treatment after gate deposition, without degradation of the memory stack.

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关键词

Metal Gate Transistors