2025 10TH INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS, ICICM(2025)
Beijing Univ Chem Technol
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摘要
This paper proposes a low-temperature-drift bandgap reference voltage source featuring wide-temperaturerange high-order compensation with process-corner-adaptive trimming. A segmented temperature compensation scheme is achieved through controlled switching between multiple distinct current paths. To mitigate the impacts of process corner variations on circuit performance caused by parameter variations in bipolar junction transistors and resistors, a trimming circuit is specifically developed. An innovative logic selection structure is designed to enable co-optimization between the segmented compensation architecture and trimming circuit. A high-ss bipolar junction transistor input-stage operational amplifier structure is utilized to mitigate flicker noise. Implemented in 0.18-mu m BCD technology, the circuit achieves a 1.2V output voltage exhibiting a temperature coefficient of 0.47 ppm/C-circle over -40(circle)C to 175(circle)C The worst-case temperature drift coefficient across process corners remains below 1.95 ppm/C-circle, while maintaining an integrated noise of 20 mu V-rms within 0.1-10Hz frequency range.