Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices
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摘要
Crystallographic symmetry fundamentally governs the generation, propagation, and polarization of spin currents, which are the core processes in spin-orbit torque technology, yet harnessing this principle to realize field-free switching remains a critical challenge. Here, we propose a general symmetry-engineering strategy that tailors spin currents via tilting crystal axis. In epitaxial tilted MnTe (0001) thin films, all-electrical magnetization switching due to strong out-of-plane spin polarization was successfully observed, where spin propagation was reoriented. Remarkably, this approach yields an exceptionally high y-polarized spin-orbit torque efficiency (ξy = 0.58), together with a significant z-polarized component (ξz = 0.07). Our work proves crystal symmetry engineering as a powerful and versatile pathway for designing spin-source materials, opening new avenues for integrating high in-plane symmetry crystals into practical, energy-efficient spintronic devices. This work proposes a novel approach to achieve all-electrical magnetization switching by tilting the crystal structure of the spin source material, thereby manipulating the spin transport and polarization direction.