Amorphous multilayers based on Se and CdSe alternated sublayers were successfully prepared by thermal vacuum evaporation and laser ablation with the periodicity of 22 nm. The multilayer structure is stable up to approximately 70 degree(s)C. In the samples prepared by laser ablation a large contraction of the multilayer stacking occurs by annealing. Amorphous SiOx/CdSe multilayers with the periodicity of approximately 15 nm were successfully prepared by thermal vacuum evaporation. The structure is stable up to 400 degree(s)C annealing temperature. Pulse excimer laser irradiation of the SiOx based multilayer produces an expansion of the interlayer distance with approximately 0.33%.
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