Analysis of the Decay Time and Bound-States Energies of a Particle in a Specific Structure GaMnAs/GaAs Quantum Well

The bound states and decay time in a certain quantum well structure (GaMnAs/GaAs) were analyzed and identified at the minimum decay time. Through the analysis of quantum mathematical equations, we derived specific formulas for energies that significantly amplify in the numerical solutions of equations throughout all dimensions of confinement. The quantification and barriers, alongside the well width, without altering the parameters utilized, were predominantly influenced by the spatial dimension parameters, such as the barrier height and well width. The principal bound state and lowest decay time were determined at a well width of 40Å and a barrier thickness of 46.27Å. This work revealed a novel characteristic known as interfacial tunnelling, which refers to the phenomenon where an electron establishes a tunnelling state between two interfaces. This tunnelling process is significantly influenced by the characteristics of the materials used, as well as the dimensions of the wells and barriers.