We present a backside thinned CMOS active pixel image sensor with 20x20 μm global shutter pixels. Full well charge is > 500,000 eand read noise is 27 eRMS, resulting in a dynamic range exceeding 84 dB. The sensor employs a dual gain global shutter pixel, wherein the pixel signal is read out by two separate gain channels. The global shutter pixel employs four in-pixel storage capacitors and 13 nMOS transistors. This pixel preserves good shutter efficiency in combination with backside thinning. The sensor is backside thinned to increase QE. Two BSI configurations are being developed, targeted to the UV (270-400 nm) and visible (400-800 nm) wavelengths. The backside thinning flow is based upon SOI wafers, and an Al2O3 anti-reflective coating is employed for backside passivation and low reflectance.
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