Compact modeling framework for multigate SOI MOSFETs based on conformal mapping techniques

Udit Monga,Dagmartin Nilsen,Jasmin Aghassi,Josef Sedlmeir,Tor A Fjeldly

IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)（2010）

norwegian university of science and technology

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摘要

A comprehensive modeling framework for 3D multigate FETs (MugFETs), applicable to FinFETs as well as gate-all-around MugFETs is presented. We use the double-gate FinFET as our reference device and solve the 2D-Laplace equation with the help of conformal mapping techniques. The 2D solution is then extended to 3D structures with the appropriate use of characteristic lengths. The results have been validated with 3D TCAD simulations from ATLAS device simulator. In addition DC-measurements on trigate SOI FinFETs for different fin width have been performed with special emphasis on the subthreshold and linear current regime behaviour. Our measured results agree reasonably well with the model.

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关键词

laplace equations,mosfet,conformal mapping,integrated circuit modelling,semiconductor device models,silicon-on-insulator,technology cad (electronics),2d-laplace equation,3d tcad simulation,3d multigate fet,atlas device simulator,dc-measurement,compact modeling framework,comprehensive modeling framework,conformal mapping technique,double-gate finfet,gate-all-around mugfet,linear current regime behaviour,multigate soi mosfet,conformal map,silicon on insulator,laplace equation

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