Convenience in use of room-temperature terahertz (THz) imaging systems, reduction of their dimensions and presence of on-chip solutions remains one of prime interests for direct implementation aims. Solid-state-based solutions in miniaturization of spectroscopic THz imaging systems including novel semiconductor nanostructures bias-free emitters, diffractive THz optics components and their on-chip integration with THz detectors are discussed. In particular, pulsed optoelectronic terahertz emitter based on a δ-doped p-i-n-i GaAs/AlxGa1−xAs heterostructure was studied and it is demonstrated that the heterostructure can serve as efficient antenna- and bias-free surface emitter. Diffractive optics elements – Fresnel zone plates –with integrated band-pass filters were simulated employing Finite-difference time domain method. Structures were fabricated using the laser direct writing and investigated using electronic THz sources and an optically pumped terahertz laser. Advantages of on-chip integration of diffractive optics and bow-tie-shaped InGaAs-based terahertz detectors are revealed via detection enhancement. Bow-tie diodes properties in frequency scale and detection sensitivity are considered and compared for different materials. Homodyne detection and imaging of low-absorbing objects at 0.6 THz are demonstrated and discussed.
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