We introduce an original method capable of quantifying, on micrometer scale dimensions, the maximum tensile strength at interfaces typically found in microelectronic devices’ frontside metallization for power and signal routing. The method has also the potential to fully derive the fracture parameters at such interfaces by measuring the adhesion strength in Mode I and Mode II/III delamination. The structures employed to this end are microcantilevers and pillars processed with routine microelectronics Back-End-of-Line (BEoL) production steps. Such structures can then be prepared for test by employing standard etching procedures without the need of time-consuming preparation by Focused Ion Beam (FIB) which allows to prepare hundreds of units in one single process run.
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