FDSOI Platform for Quantum Computing

Si-based qubits are considered the most promising experimental system for scaling quantum computing. For the first time, FDSOI CMOS technology is demonstrated as the platform to co-integrate hole and electron spin qubits with cryo-electronics. For cryo-control, we show voltage gain as high as 75dB for long devices, noise of $10^{-11} \mathrm{V}^2 \cdot \mu\mathrm{m}^2 / \text{Hz}$ and $1.29\text{mV}\cdot \mu\mathrm{m}$ threshold voltage variability. We propose a standard cell for two-qubit gates on commercial 22FDX® and show double quantum dot features. Finally, we demonstrate hole and electron qubits on the same FDSOI technology with a manipulation time below $1\mu \mathrm{s}$ and coherence time of $40\mu{\mathrm{s}}$. (Hahn echo), respectively.