High Efficiency (EQE = 37.5

A. V. Malevskaya,N. A. Kalyuzhnyy,S. A. Mintairov,R. A. Salii,D. A. Malevskii,M. V. Nakhimovich,V. R. Larionov,P. V. Pokrovskii,M. Z. Shvarts,V. M. Andreev

Semiconductors（2024）SCI 4区

Ioffe Institute

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摘要

Developed and investigated are IR (850 nm) light-emitting diodes based on AlGaAs/Ga(In)As heterostractures grown by the MOCVD technique with multiple quantum wells in the active region and with a double optical reflector consisted of a multilayer Al0.9Ga0.1As/Al0.1Ga0.9As Bragg heterostructure and an Ag mirror layer. Light-emitting diodes with the external quantum efficiency EQE = 37.5

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Keywords: IR light-emitting diode,AlGaAs/GaAs heterostructure,Bragg reflector,InGaAs quantum wells

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