In our work pulsed electrical excitation was used to excite single InP/Ga 0.51 In 0.49 P quantum dots which were embedded into the intrinsic region of a p-i-n mesa structure. To enhance collection efficiency the active region is surrounded by two Bragg reflectors forming a low-Q cavity. The samples are excited using a pulse pattern generator together with a fast amplifier. We obtain triggered single-photon emission in the red spectral range (~ 650 nm) at an excitation repetition rate of up to 200 MHz.