High-performance N-Type Polymer Field-Effect Transistors with Exceptional Stability

Development of organic field-effect transistors (OFETs) that simultaneously exhibit high-performance and high-stability is critical for complementary integrated circuits and other applications based on organic semiconductors. While progress has been made in enhancing p-channel devices, engineering competitive n-type organic transistors remains a formidable obstacle. Herein, we demonstrate the achievement of high-mobility n-type OFETs with unprecedented operational stability through innovative device and material engineering. Thin film transistors fabricated on donor-acceptor polymers based on indacenodithiazole (IDTz) and diketopyrrolopyrrole (DPP) units exhibit electron mobilities up to 1.3 cm2 V-1 s-1, along with a negligible change in mobility, and threshold voltage shift as low as 0.5 V under continuous bias stress of 60 V for both the gate-source and drain-source voltages persisting for more than 1000 min. These remarkable properties position our OFETs as formidable counterparts to p-type transistors, addressing a longstanding challenge in the field. High-mobility n-type organic transistors that maintain performance for over 1000 minutes under bias stress pave the way for complementary organic circuits, overcoming a key obstacle in the field.