Atomic layer etching (ALE) is becoming an important technology for patterning and shaping of electronic and photonic devices. This tutorial briefly recaps the fundamentals of thermal, directional and plasma assisted atomic layer etching. Performance benefits and limitations for ALE in comparison to the continuous processing analogues such as reactive ion etching, radical and vapor etching are the consequence of the cyclic self-limited structure of ALE processes. Selection criteria for the appropriate etching technology for a given task will be presented. The enormous progress in the development of new ALE process and chemistries will be illustrated using published and potential practical applications in the manufacturing of electronic and photonics devices. They include multi-patterning, advanced planar and 3D logic and memory devices, 2D materials, emerging memories comprised of hard to etch materials, power and optical devices and combinations of ALE and atomic layer deposition.
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