Millimeter-Wave Limiter Based on GaN MMIC Technology

Xiaolin Hao,Guodong Gu,Hongyu Guo,Xubo Song,Lisen Zhang,Jianjun Gao, Feifei Liu, Jian Dai,Yuanjie Lv,Cui Yu,Ao Zhang,Zhihong Feng

IEEE Microwave and Wireless Technology Letters（2026）

Hebei Semicond Res Inst

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摘要

In this work, the high-power millimeter-wave limiter based on a gallium nitride (GaN) quasi-vertical structure Schottky barrier diode (SBD) is proposed and validated in the range of 30-36 GHz. The high-doping concentration and thin thickness of the n-layer GaN can effectively reduce the on-resistance of GaN SBD, thereby reducing the insertion loss of limiters. The limiter utilizes GaN MMIC technology to enhance the consistency of multistage circuit manufacturing. In addition, the limiter adopts a three-stage structure design and combines with the power division structure to optimize the power handling capability of the first-stage limiter, further improving the overall system output power capacity. The insertion loss of the limiter is less than 2 dB within the frequency range of 30-36 GHz. This limiter can withstand a pulse input power of 20 W without burning out. The limiter based on GaN SBD exhibits advantages in high frequency and high power.

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关键词

Generative adversarial networks,Modeling,Waves,Wireless Access in Vehicular Environments,Circuits,Technology,Diodes,Cutoff frequency,Design methodology,Schottky diodes,Gallium nitride (GaN),limiter,millimeter wave,Schottky barrier diode (SBD)

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