We present preliminary results from a quantum well intermixed monolithically integrated multi-mode interferometer array laser which potentially offers superior near and far-field characteristics, single-mode power capability, stability, and single-wavelength operation.
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III-V semiconductors,aluminium compounds,chemical interdiffusion,gallium arsenide,integrated optics,laser modes,laser stability,quantum well lasers,semiconductor laser arrays,semiconductor quantum wells,GaAs-AlGaAs,defect induced quantum well intermixing,double quantum well GaAs/AlGaAs material,far-field characteristics,monolithically integrated multi-mode interferometer array laser,near-field characteristics,passive multi-mode interference coupler,single-mode power capability,single-wavelength operation,stability
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