Infrared Optical up-conversion devices are attracting more and more attentions for their greater capability to convert infrared light to visible light via optical-electrical-optical process, compared with other existing converting technology. The basic idea is to integrate an infrared photodetector with a light-emitting diode (LED) or an organic light-emitting device (OLED), connected in series. The infrared photo-generated electron hole pairs within the absorbing layer of photodetector are injected to the LED (or OLED), resulting in an increase in optical emission at a shorter wavelength and therefore achieving optical up conversion. This paper presents our research and development effort in realizing and perfecting such devices, and mainly focuses on the design, internal semiconductor physics, fabrications, and performances of different optical up-conversion device structures. Moreover, based on the analysis of experimental results, the paper explains the close relationship between internal coefficient and overall upconversion power efficiency.
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