Physics-based Numerical Modeling for SiCMOSFET Devices

SiC-MOSFET has shown up prominently as one of the most promising power electronics devices owing to its comprehensive splendid performance. In spite of that, the challenge of electric and thermal stress still restricts further technical application of SiC-MOSFET. The internal characteristics of SiC-MOSFET is closely related to its internal structural parameters and doping concentration together with its material physical parameters. In order to develop further explore on the stress boundary of SiC-MOSFET, a physicalbased numerical model of a specific SiC-MOSFET device is established based on TCAD (Technology Computer Aided Design) in this work. To verify the accuracy of the model, a simple but effective parameters calibration procedure which only needs overt datasheet provided by producers is developed. Short circuit simulation is also performed to verify the accuracy of the model. With credible physical-based numerical model of SiC-MOSFET, it is possible to improve its performance and broaden its application scenarios.