In EUV lithography, extreme ultraviolet radiation of 13.5 nm wavelength is used to print feature with resolutions consis-tent with the requirements of the 45 nm technology node or below. EUV is produced by heating xenon, tin, or other ele-ments to a plasma state, using either magnetic compression or laser irradiation. The key concerns-identified at the third EUV-Symposium-are the ability to supply defect-free masks and to increase source component lifetimes to meet the wafer throughput requirements for high volume manufacturing. Source availability and performance, however, made steady progress within the last years on two lines of actions: High power sources for high volume production and medium and low power sources for allowing in-house metrology and performance studies on EUV-mask-blanks, EUV-Masks, photoresists and optical elements. For "volume production sources" 50 W of collected EUV powers are already available by various suppliers. Compact discharge sources of medium power in the range of 10-100 mW / sr / 2% bandwidth and low power EUV-tubes of low-est cost of ownership and superior stability are ideal for peripheral metrology on components for EUV-Lithography. These low power sources supplement beamlines at storage rings by transferring EUV-applications to individual R&D labs. Proceeding integration of those EUV sources into tools for technology development like open frame and micro-exposers, and in tools for actinic metrology is the best proof of the progress. As of today, the first EUV sources and measurement equipment are available to be used for EUV system, mask, optics and component as well as lithography process development. With the commercial availability of EUV-plasma sources other applications using short wave-length, XUV-radiation will be feasible in a laboratory environment. Some examples of XUV applications are discussed.
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