Proton Irradiation Tolerance of Fully Printed Self‐Powered Carbon‐Electrode Perovskite Photodetectors

ABSTRACT Self‐powered perovskite photodiodes are promising candidates for low‐power optical sensing, yet their stability under particle irradiation remains insufficiently understood. In this work, we investigate the influence of 0.5 MeV proton irradiation on fully printed carbon‐electrode perovskite photodetectors. The devices were exposed to irradiation fluences of 10 13 , 10 14 , and 10 15 protons cm −2 and systematically characterized through structural, optical, chemical, and electrical measurements. Structural characterization shows that the main perovskite phase is preserved after irradiation, while weak additional diffraction features and XPS binding‐energy shifts indicate defect formation and modifications in the local Pb–halide coordination environment. Optical measurements reveal photoluminescence quenching and shorter carrier lifetimes, confirming enhanced non‐radiative recombination. Under self‐powered (0 V) operation, a reference device exhibits a photocurrent of 7.8 mA cm −2 under 100 mW cm −2 illumination with a maximum responsivity of 0.31 A W −1 and detectivity on the order of 10 10 Jones. After irradiation at 10 15 protons cm −2 , the photocurrent and responsivity decrease to 3.3 mA cm −2 and 0.19 A W −1 , respectively. Although proton irradiation significantly reduces the photovoltaic and photodetection performance, the photodiodes remain functional and maintain a stable photoresponse, indicating that irradiation primarily increases non‐radiative recombination rather than causing complete loss of device operation.