The combined development of silicon drift detectors (SDDs) and aberration correction in the scanning transmission electron microscope (STEM) has a significantly advanced the field of microanalysis [1,2]. In particular, the combination of improved detector efficiency and high current densities really opens up the possibilities of quantitative energy dispersive X-ray (EDX) spectroscopy. We can now routinely achieve beautiful EDX maps which reveal atomic-scale features within our materials. However, it still remains to understand exactly where the X-ray signals come from within the specimen and how accurately they can be quantified at these length scales.