Semiconductor Devices: Physics and Technology

Preface. Introduction. PART I: SEMICONDUCTOR PHYSICS. Energy Bands and Carrier Concentration in Thermal Equilibrium. Carrier Transport Phenomena. PART II: SEMICONDUCTOR DEVICES. p-n Junction. Bipolar Transistor and Related Devices. MOSFET and Related Devices. MESFET and Related Devices. Microwave Diodes, Quantum-Effect, and Hot-Electron Devices. Photonic Devices. PART III: SEMICONDUCTOR TECHNOLOGY. Crystal Growth and Epitaxy. Film Formation. Lithography and Etching. Impurity Doping. Integrated Devices. Appendix A: List of Symbols. Appendix B: International Systems of Units (SI Units). Appendix C: Unit Prefixes. Appendix D: Greek Alphabet. Appendix E: Physical Constants. Appendix F: Properties of Important Element and Binary Compound Semiconductors at 300 K. Appendix G: Properties of Si and GaAs at 300 K. Appendix H: Derivation of the Density of States in Semiconductor. Appendix I: Derivation of Recombination Rate for Indirect Recombination. Appendix J: Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode. Appendix K: Basic Kinetic Theory of Gases. Appendix L: Answers to Selected Problems. Index.