: The development of water-based diamond growth processes have lead to low-temperature, low-power diamond growth using water:acetic-acid:methanol mixtures. These mixtures readily inductively couple allowing low-power (500 W) inductive discharges to sustain diamond growth. Currently, growth at 300 C is possible with these acetic solutions. No serious degradation in diamond quality has been observed as the growth temperatures are reduced from 600 to 300 C. In a parallel effort, surface chemistry studies have addressed the role of atomic O on diamond surfaces. Atomic O readily converts the 2x1 surface states into a 1x1:O terminated surfaces. Oxygen desorbs from diamond as CO at temperatures approximately 300 C colder than atomic H desorption. Desorption of approximately 90% of the oxygen from the surface as CO does not result in surface reconstruction. Only upon vacuum anneal to 1000 C does the diamond surface reconstruct.
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